SiC based UV photodiode SG01M-5LENS

Properties of the SG01M-5LENS UV photodiode
? Broadband UVA+UVB+UVC, PTB reported high chip stability, for very weak radiation
? Radiation sensitive area A = 11.0 mm2
? TO5 hermetically sealed metal housing with concentrator lens, 1 isolated pin and 1 case pin
? 10µW/cm2 peak radiation results a current of approx. 140 nA

Spectral Characteristics
Typical Responsivity at Peak Wavelength: 0.130 A/W
Wavelength of max. Spectral Responsivity: 280nm
Responsivity Range (S=0.1*Smax ): 221 … 358nm
Visible Blindness (Smax/S >405nm ):>10 10

General Characteristics (T=25'C)
Sensitive Area (chip size = 0.50 mm 2 ): 11.0 mm2
Dark Current (1V reverse bias): 0.7fA
Capacitance: 50pF
Short Circuit (10µW/cm 2 at peak): 140nA
Temperature Coefficient: 0.1%/K

Maximum Ratings
Operating Temperature: –55 … +170 °C
Storage Temperature: –55 … +170 °C
Soldering Temperature (3s): 260°C
Reverse Voltage: 20V
SiC based UV photodiode SG01M-5LENS